MOSFETs offer current ratings from 2A to 120A and on-resistance as low as 24mohm

Ideal for high-efficiency, high-speed power switching applications, the IXYS 650V Ultra Junction X2-Class Power MOSFET, which offers current ratings ranging from 2A to 120A and on-resistance as low as 24 milliohms, is now available from Mouser stock. Developed using a charge compensation principle and proprietary process technology with significantly reduced on-state resistance and gate charge, the X2-Class Power MOSFET perform better than conventional superjunction devices, especially in hard-switching applications. Avalanche-rated and capable of achieving superior dv/dt performance (50V/ns), the Ultra Junction X2-Class Power MOSFETs provide resistance against device failure caused by voltage spikes and turn-on of parasitic bipolar transistors inherent in the MOSFET structure. Due to the positive temperature coefficient of their on-state resistance, designers can operate the MOSFETs in parallel to meet higher current requirements. Designed for applications such as power factor correction (PFC) circuits, switched-mode and resonant-mode power supplies, DC-DC converters, AC and DC motor drives, and robotic and servo control, these Ultra Junction X2-Class Power MOSFETs achieve high efficiency, along with high power density and cooler system performance.