Robust and cost-effective Trench technology insulated gate bipolar transistors

Featuring a robust and cost-effective Trench construction, ON Semiconductor's NGTB 25-75A insulated gate bipolar transistors (IGBTs) are now available from Mouser stock. The devices provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. They are particularly suitable for welding applications. Incorporated into the device is a soft and fast co-packaged free-wheeling diode with a low forward voltage.