Latest MMICs target X-band and C-band high-frequency applications

28-05-2015 | Mouser Electronics | Semiconductors

Mouser now stocks gallium nitride high electron mobility transistor (HEMT) monolithic microwave integrated circuits (MMICs) from Cree. These new MMICs target X-band and C-band high-frequency applications. The transistors feature a wide bandgap material used for high-power high-performance semiconductors with electrical characteristics superior to conventional silicon devices, useful in many applications including power conversion systems. High speed GaN devices demonstrate noticeable performance advantages in sensitive radar equipment, satellite radios, and broadband amplifiers. The GaN MMIC transistors provide extremely wide signal bandwidths in a very small footprint. Minimum power output is 25W for the CMPA5585025F MMIC for 5.5 to 8.5GHz C-band communications. The CMPA801B025F MMIC provides 25W for the 8 to 11GHz X band frequencies used for radar and communications systems. The high-end CMPA601C025F MMIC supports the X-band operating frequencies from 6GHz up to 12GHz at 35Ws. The devices are available in screw terminal mountings. The devices target high-precision, high-reliability, high-frequency applications such as marine and land-based radar systems, broadband radio amplifiers, point-to-point radio systems, satellite communications including uplinks, and test equipment amplifiers.
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By Craig Dyball