Wide-pitch eGaN FET family enables high current from smaller footprint
22-05-2015 |
EPC
|
Semiconductors
Efficient Power Conversion Corporation (EPC) has announced three new eGaN
FETs designed with a wider pitch connection layout. The products expand
EPC's family of 'Relaxed Pitch' devices featuring a 1mm ball pitch. The
wider pitch allows for placement of additional and larger vias under the
device to enable high current carrying capability despite the extremely
small 2.6mm x 4.6mm footprint.
Compared to a state-of-the-art silicon power MOSFET with similar
on-resistance, the devices are much smaller and have superior switching
performance. They are ideal for applications such as high frequency DC-DC
converters, synchronous rectification in DC-DC and AC/DC converters, motor
drives, and class-D audio, says the company.