Matched transistor delivers wideband gain and power performance

17-04-2015 | Mouser Electronics | Semiconductors

Mouser now stocks TriQuint's TGF2965-SM GaN RF Input-Matched Transistor, a 6W (P3dB), 50ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3GHz. The integrated input matching network enables wideband gain and power performance. The output can be matched on board to optimize power and efficiency for any region within the band. Typical applications include radar, mobile and radio communications, test instrumentation, wideband and narrowband amplifiers and jammers.

By Craig Dyball