High-efficiency 5W GaN input-matched transistor covers 5GHz ISM bands

19-03-2015 | RFMW | Semiconductors

RFMW now stocks TriQuint's TGF3020-SM high-efficiency, GaN, 5W input-matched transistor covering the 5GHz ISM bands. The device provides 5.7W P3dB at 5.4GHz. The transistor can be tuned for power, gain and efficiency. Linear gain is 12dB.

Packaged as a 3mm x 3mm plastic QFN, the TGF3020-SM is capable of pulsed and CW operation. With wideband performance from 4 to 6GHz, applications include telemetry, C-band radar, and instrumentation. Power added efficiency (PAE) at P3dB measures 53%. The TGF3020-SM operates from a 32V supply.

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