Pair of MOSFET H-bridges reduces footprint by 50%

22-01-2015 | Diodes Inc | Semiconductors

A pair of MOSFET H-bridges from Diodes Incorporated simplifies motor driving and inductive wireless charging circuits by cutting component count and reducing PCB footprint by 50%. The 40V-rated H-bridge, the DMHC4035LSD, is aimed at meeting the requirements of automotive motor driving applications, whereas the 30V-rated H bridge, the DMHC3025LSD, is suitable for 12V single-phase fan applications.

By packaging dual N-channel and dual P-channel MOSFETs to make a full H-Bridge in just a single 5mm x 6mm SO-8 footprint, the DMHC3025LSD and DMHC4035LSD replace the equivalent four SOT23 or two SO-8 packages for a wide range of space-constrained automotive and industrial applications, including: low-power DC brushless motor driving, fan control and similar requirements for driving inductive loads.

The H-bridges’ space-saving advantage is complemented by the low RDS(ON) performance of the MOSFETs: typically 45mO at 10V VGS and 65mohm at -10V VGS, respectively, for the 40V N-channel and P-channel devices. The minimal conduction losses resulting from the low on resistance mean the H-bridges are able to tolerate higher continuous current under motor stall conditions. Under +70C high ambient operating temperature, the 30V and 40V H-bridges can support continuous currents of 3A and 2A, respectively, thereby accommodating worst-case motor stall currents, says the company.

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