Nexperia Highlights Next-Gen Silicon Carbide MOSFETs and Topside Cooling

At PCIM 2025, Electropages spoke with Dr. Sebastian Fahlbusch, Head of Product Engineering for Silicon Carbide at Nexperia, about their rapid progress in SiC MOSFET development. Within a year of launching their first devices, Nexperia has achieved automotive qualification and introduced next-generation packaging with topside cooling. 

Dr. Fahlbusch explains how Nexperia’s SiC technology delivers stable RDS(on) across temperature ranges, enabling higher power density and greater reliability in applications such as onboard chargers, EV systems, and industrial drives. The discussion also explores broader market opportunities, from data centres and renewables to heavy-duty and aerospace electrification. 

Learn more at www.nexperia.com