Isolated gate driver IC optimised for high-voltage GaN devices released

27-06-2025 | ROHM Semiconductor | Power

ROHM has developed an isolated gate driver IC – the BM6GD11BFJ-LB. It is designed specifically for driving HV-GaN HEMTs. When combined with GaN devices, this driver enables stable operation under high-frequency, high-speed switching conditions, contributing to greater miniaturisation and efficiency in high-current applications, such as motors and server power supplies.

As global energy consumption continues to increase, energy-saving initiatives have become a shared global priority. Motors and power supplies alone are estimated to account for approximately 97% of the world's total electricity consumption. Achieving higher efficiency in these systems is increasingly dependent on using wide bandgap devices such as SiC and GaN to control and convert electricity more efficiently.

Leveraging expertise in developing isolated gate driver ICs for silicon semiconductors and SiC devices, the company has introduced this new IC as the first in a series of isolated gate driver solutions optimised for GaN devices. Safe signal transmission is accomplished by isolating the device from the control circuitry during switching operations that involve rapid voltage rise and fall cycles.

The device employs proprietary on-chip isolation technology to reduce parasitic capacitance, allowing high-frequency operation up to 2MHz. This maximises the high-frequency switching capabilities of GaN devices. This contributes not only to greater energy efficiency and performance in applications but also decreases mounting area by minimising the size of peripheral components.

At the same time, CMTI has been increased to 150V/ns – 1.5 times higher than conventional products – preventing malfunctions caused by the high slew rates typical of GaN HEMT switching. The minimum pulse width has also been lowered to just 65ns, 33% less than conventional products. These performance improvements enable stable and reliable operation at higher frequencies while minimising power loss through improved duty cycle control.

With a gate drive voltage range of 4.5V to 6V and an isolation voltage of 2500Vrms, the device is designed to fully support a wide range of high-voltage GaN devices, including the company's newly added 650V EcoGaN HEMT. The industry-leading low output-side current consumption of 0.5mA (Max) also decreases standby power, improving overall system efficiency.

Application examples:

  • Industrial Equipment: Power supplies for PV inverters, ESS, communication base stations, servers, and industrial motors.
  • Consumer Devices: White goods, AC adapters (USB chargers), PCs, TVs, refrigerators, and air conditioners.
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By Seb Springall

Seb Springall is a seasoned editor at Electropages, specialising in the product news sections. With a keen eye for the latest advancements in the tech industry, Seb curates and oversees content that highlights cutting-edge technologies and market trends.