Advances on the 300mm GaN manufacturing roadmap

As the demand for GaN semiconductors continues to grow, Infineon Technologies AG is poised to capitalise on this trend and solidify its position as a leading Integrated Device Manufacturer (IDM) in the GaN market. Today, the company announced that its scalable GaN manufacturing on 300mm wafers is on track. With the first samples available for customers as of the fourth quarter of 2025, the company is well-positioned to grow its customer base and reinforce its position as a leading GaN powerhouse.

As a leader in power systems, the company is mastering all three relevant materials: Si, SiC and GaN. With higher power density, faster switching speeds, and lower power losses, GaN semiconductors enable smaller designs, reducing energy consumption and heat generation in electronic devices such as smartphone chargers, industrial and humanoid robots, or solar inverters.

"Our fully scaled-up 300mm GaN manufacturing will allow us to deliver highest value to our customers even faster while moving towards cost parity for comparable silicon and GaN products," said Johannes Schoiswohl, head of GaN Business Line at Infineon. "Almost a year after the announcement of Infineon's breakthrough in 300mm GaN wafer technology, we are pleased that our transition process is well on track and that the industry has recognised the importance of Infineon's GaN technology enabled by the strength of our IDM strategy."

The company's manufacturing strategy primarily relies on an IDM model, which involves owning the entire semiconductor production process, from design to manufacturing, and selling the final product. Its in-house manufacturing strategy is a key differentiator in the market, providing several advantages, such as high quality, faster time-to-market, and superior design and development flexibility. It is committed to supporting its GaN customers and can scale capacity to fulfil their needs for reliable GaN power solutions.

Building on its technology leadership, the company has become the first semiconductor manufacturer to successfully develop 300mm GaN power wafer technology within its existing high-volume manufacturing infrastructure. Chip production on 300mm wafers is technically more advanced and significantly more efficient compared to established 200mm wafers, as the larger wafer diameter allows 2.3 times more chips to be produced per wafer. These increased capabilities combined with the company's large team of GaN experts and the industry's most comprehensive IP portfolio are required as GaN power semiconductors are being rapidly adopted in industrial, automotive, consumer, and computing and communication applications, such as power supplies for AI systems, solar inverters, chargers and adapters or motor control systems.