Wide-bandgap portfolio with SiC Schottky diodes for power-intense infrastructure

Nexperia has added two 1200V 20A SiC Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been developed to meet the demand for ultra-low power loss rectifiers, which allow high-efficiency energy conversion in industrial applications. As such, they are ideal for the PSUs in power-intensive AI server infrastructure, telecommunications equipment and solar inverter applications.

These new Schottky diodes deliver leading-edge performance through temperature-independent capacitive switching and zero recovery behaviour that provides an outstanding FoM (QC x VF). Furthermore, they exhibit switching performance that is almost wholly independent of current and switching speed variations. The merged PiN Schottky (MPS) structure of these devices supplies additional benefits, such as outstanding robustness against surge currents as evidenced by their high peak-forward current (IFSM). This feature eliminates the necessity for extra protection circuitry, thereby significantly reducing system complexity and allowing engineers to achieve higher efficiency with smaller form factors in rugged, high-voltage applications.

This PSC20120J is encapsulated in a Real-2-Pin D2PAK R2P (TO-263-2) SMD power plastic package, while the PSC20120L is housed in a Real-2-Pin TO247 R2P (TO-247-2) through-hole power plastic package. These thermally stable packages enhance device reliability in high-voltage applications at operating temperatures up to 175C. Designers can be further reassured by its reputation as a proven manufacturer of high-quality semiconductor products in a range of semiconductor technologies supported by a robust supply chain.