15-07-2025 | Kioxia | Industrial
KIOXIA Europe GmbH has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, strengthening its leadership in high-performance storage. Engineered to meet the demands of next-generation mobile applications, including advanced smartphones with on-device AI, the new devices deliver improved performance with enhanced power efficiency in a compact BGA package.
UFS Ver. 4.1 devices from the company integrate its innovative BiCS FLASH 3D flash memory and a controller in a JEDEC-standard package. These new UFS devices are built with KIOXIA's 8th-generation BiCS FLASH 3D flash memory. This generation introduces CBA (CMOS directly Bonded to Array) technology—an architectural innovation that marks a step change in flash memory design. By directly bonding the CMOS circuitry to the memory array, CBA technology enables significant improvements in power efficiency, performance, and density.
With a blend of speed and low power use, the devices are built to enhance user experiences, enabling faster downloads and smoother app performance.
Key features include:
"KIOXIA's new UFS Ver. 4.1 embedded memory devices signify a notable advancement, reinforcing KIOXIA's leadership in high-performance storage and its commitment to leading flash storage innovation," says Axel Störmann, vice president and chief technology officer for Memory and SSD products, KIOXIA Europe GmbH. "Engineered with 8th generation BiCS FLASH and CBA technology, these devices meet the demands of tomorrow's next-generation mobile applications, including on-device AI, marking a significant leap forward from predecessors."