27-06-2025 | Infineon | Semiconductors
Nearly 10,000 satellites currently circle our planet in low Earth orbit (LEO), delivering internet access, earth observation, communications, weather information, and more data back to Earth. Compared to traditional geostationary Earth orbit (GEO) systems, LEO satellites are launched in larger numbers to attain sufficient coverage and operate in a less severe radiation environment. As such, LEO satellites need different electrical components compared to their traditional GEO counterparts. To support the development of these applications, Infineon Technologies AG introduces a new portfolio of radiation-tolerant memory products tailored for the rapidly growing NewSpace market.
NewSpace refers to the commercialisation of space exploration by private companies and startups, often with less governmental oversight than conventional space programs. Driven by the rising demand for global connectivity (direct-to-cell), NewSpace initiatives aim to combine LEO satellite constellations with the IoT to create a more connected and efficient world. These missions typically rely on smaller satellites, ranging from nano-sats to 250kg Sats, and are shorter in mission duration and less expensive, allowing the deployment of large-scale LEO constellations. With lower launch costs and lowered radiation exposure in LEO, many NewSpace applications can benefit from COTS components that deliver robust performance without needing traditional military or aerospace qualifications.
The company's NewSpace memory portfolio includes three product families: low-power, radiation-tolerant F-RAMs; QSPI NOR flash memories with 256Mbit and 512Mbit densities; and 256Mbit/512Mbit pseudo-static RAM SRAMM). These devices provide an optimal combination of performance and reliability while supporting decreased size, weight, power, and cost benefits (SWaP-c). The F-RAMs operate across a wide MIL temperature range of -55C to +125C, while the NOR Flash and pSRAM devices support a range of -40C to +125C. Radiation tolerance demonstrates a total ionising dose (TID) rating of 50 krad(Si) for the F-RAMs, 30 krad(Si) for the NOR Flash, and 100 krad(Si) for the pSRAM. Further benefits include single lot date code and 100% electrical testing to ensure reliable mission operation. With these characteristics, the company's memory products are excellent for short-duration, high-redundancy, and large-scale LEO constellations.
The company's pSRAM is the first of its kind for NewSpace, delivering a unique memory type, whose memory array is structured like DRAM internally but presents itself like static RAM (SRAM) externally. The pSRAMs are a low-power, high-performance, and low-pin-count solution that is excellent for high-throughput data buffering applications.
In addition to the NewSpace memory solutions, the company's IR HiRel group offers a wide portfolio of radiation-tolerant power devices designed for the commercial space market. Combining decades of experience in aerospace and automotive, the portfolio features highly reliable, cost-effective power MOSFETs optimised for 2- to 5-year LEO missions. Available in 60V and 150V N- and P-channel variants, these devices are qualified to AEC-Q101 and come in a rugged plastic package, with options for surface-mount and through-hole mounting. The devices are rated for a TID of 30 krad(Si), supporting radiation demands of modern LEO missions.