SiC MOSFET modules offer reduced switching losses and improved thermal resistance

SemiQ Inc. has announced a family of co-packaged 1200V SOT-227 MOSFET modules based on its third generation SiC technology.

As well as smaller die sizes, third generation SIC devices offer faster switching speeds and lowered losses. The family of highly rugged and easy-mount devices currently offers six devices with an RDSon range of 8.4mΩ to 39mΩ: GCMS008C120S1-E1, GCMX008C120S1-E1, GCMS016C120S1-E1, GCMX016C120S1-E1, GCMS040C120S1-E1 and GCMX040C120S1-E1, with the GCMX040C120S1-E1 having a switching time as low as 67ns. In addition, six modules – GCMS080C120S1-E1 and GCMX080C120S1-E1 are available, each with an RDSon of 80mΩ.

The COPACK MOSFETs with Schottky barrier diode provide excellent switching losses at high junction temperatures due to the low turn-on switching losses.

The company targets robust SiC MOSFET modules for applications, including solar inverters, energy storage systems, battery charging, and server power supplies. All devices have been screened with wafer-level gate-oxide burn-in tests and tested beyond 1400V, with avalanche testing to 330mJ (RDSon = 39mΩ) or 800mJ (RDSon = 16.5mΩ or 8.4mΩ).

In addition to having a drain-to-source voltage (VDS) of 1200V, the MOSFET decreases total switching losses to as low as 468µJ and a reverse recovery charge of 172nC (GCMX040C120S1-E1). The family also has a low junction-to-case thermal resistance and comes with an isolated backplate and the ability to mount directly to a heatsink by 4kVAC galvanic isolation testing.

The QSiC 1200V MOSFET modules have a continuous operational and storage temperature of -55C to 175C. It has a recommended operational gate-source voltage of -4.5/18V, a VGSmax of -8/22V, a power dissipation of 183 to 536W and a junction temperature of 25C.

For static electrical characteristics, the device has a junction-to-case thermal resistance of 0.23C per watt (RDSon = 8.4) a typical zero-gate voltage drain current of 100nA, and a gate-source voltage current of 10nA.

The fastest switching device has a turn-on delay time of 13ns with a rise time of 7ns; its turn-off delay time is 18ns with a fall time of 29ns.