Gen3 SiC MOSFET range expanded with top-side cooling and isolated thermal path

SemiQ Inc. has expanded its Gen3 SiC MOSFET offering, launching a 1200V TSPAK-packaged series. The four-strong series of Gen3 MOSFETs delivers continuous drain currents of between 27A and 101A and pulsed drain current from 70A to 350A, with device resistances (RDSon) ranging from 80mΩ to 16mΩ respectively.

All devices are operational to 175C and have been tested to voltages greater than 1400V, undergoing wafer-level burn-in testing (WLBI) and UIL avalanche testing up to 800mJ (RDSon = 16mΩ, 160mJ for the 80mΩ device).

The easy-to-parallel devices implement top-side cooling and an isolated thermal path with a ceramic isolated back paddle. The package incorporates a driver source kelvin pin for gate driving and a gate pin, five source pins and a drain tab.

The TSPAK MOSFETs deliver a lower capacitance, decreased switching losses, longer clearance distance and higher overall system efficiency. The company is targeting the devices at a range of industrial and EV applications, including solar inverters and energy storage, induction heating and welding, EV charging stations and onboard chargers, motor drives, high-voltage DC-DC converters and UPS/SMPS.

Dr Timothy Han, president at SemiQ said: "The launch of the TSPAK Gen3 SiC MOSFET family enables the creation of higher power density supplies, at a lower system cost as well as more compact system designs at large scale."

All devices in the series are housed in a 18.6mm x 14mm x 3.5mm TSPAK package, have a zero gate voltage drain current of 0.1µA, a -10/10nA gate-source leakage current and a 3.5V gate threshold voltage (cited characteristics measured at 25C). The series is available immediately.

The series’ cycle times range from 49ns (80mΩ MOSFET) to 114ns (16mΩ), and the devices have total switching energy of between 153µJ (80mΩ MOSFET) and 1565µJ (16mΩ). Key specifications are shown in the table below – all characteristics shown have been measured at 25C.