80V MOSFET offers best in class RDS(ON) to increase efficiency

To enhance efficiency for industrial applications, Vishay Intertechnology, Inc. has introduced a new 80V TrenchFET Gen IV n-channel power MOSFET in the PowerPAK 8x8SW bond wire (BWL) package, providing best-in-class on-resistance. Compared to competing devices in the same footprint, the Vishay Siliconix SiEH4800EW offers 15% lower on-resistance while lowering RthJC by 18%.

With on-resistance down to 0.88mΩ typical at 10V, the device released today minimises power losses from conduction to increase efficiency while improving thermal performance with a low maximum RthJC of 0.36C/W. With its 8mm x 8mm footprint, the space-saving device occupies 50% less PCB space than MOSFETs in the TO-263 package while offering an ultra-low profile of 1mm.

The SiEH4800EW implements a fused lead to improve the source PAD solderable area to 3.35mm², which is four times larger than a traditional PIN solder area. This reduces the current density between the MOSFET and PCB, thereby decreasing the risk of electromigration and allowing for a more robust design. Additionally, the device's wettable flanks improve solderability, making it easier to inspect the reliability of the solder joints visually.

The MOSFET is excellent for synchronous rectification and OR-ing functionality. Typical applications will include motor drive controls, power tools, welding equipment, plasma cutting machines, battery management systems, robotics, and 3D printers. In these applications, the device offers high-temperature operation up to 175C, and its BWL design minimises parasitic inductance while maximising current capability.

RoHS-compliant and halogen-free, the MOSFET is 100% Rg and UIS tested.