New ICeGaN GaN power ICs facilitate the highest efficiency levels

17-06-2024 | Cambridge GaN Devices | Power

Cambridge GaN Devices has launched its lowest-ever on-resistance (RDS(on)) parts, engineered with a new die and new packages to provide the benefits of GaN to high-power applications such as data centres, inverters, motor drives, and other industrial power supplies. New ICeGaN P2 series ICs feature RDS(on) levels down to 25mOhm, supporting multi-kW power levels with the highest efficiency.

Andrea Bricconi, chief commercial officer of CGD, stated: β€œThe explosive growth of AI is leading to a significant increase in energy consumption, prompting data centre systems designers to prioritise the use of GaN for high-power, efficient power solutions. This new series of Power GaN ICs is a stepping stone for CGD to support our customers and partners by achieving and exceeding 100kW/rack power density in data centres, required by most recent TDP (Thermal Design Power) trends for high-density computing. Turning to motor control inverters, developers are looking to GaN to reduce heat for smaller, longer-lasting system power. These are just two examples of markets that CGD is now aggressively targeting with these new high-power ICeGaN ICs. Simplified gate driver design and reduced system costs, combined with advanced high-performance packaging, make P2 series ICs an excellent choice for these applications.”

Including an on-chip Miller Clamp to eradicate shoot-through losses during fast switching and implementing 0V turn-off to minimise reverse conduction losses, ICeGaN ICs outperform discrete e-Mode GaN and other incumbent technologies. The new packages provide improved thermal resistance performance as low as 0.28K/W – again, equivalent or better than anything else currently available on the market – and the dual-gate pinout of the dual side DHDFN-9-1 (Dual Heat-spreader DFN) package enables optimal PCB layout and simple paralleling for scalability, allowing customers to address multi kW applications with ease. The new packages have also been engineered to enhance productivity, with wettable flanks to simplify optical inspection.

New series are sampling now. The family includes four devices with RDS(on) levels of 25mOhm and 55mOhm, rated at 60A and 27A, in 10mm x 10mm footprint DHDFN-9-1 and BHDFN-9-1 (Bottom Heat-spreader DFN) packages. In common with all CGD ICeGaN products, the series can be driven using any standard MOSFET or IGBT driver.

Two demo boards feature the new P2 devices: a single leg of a three-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies nouvelles, and a 3kW totem-pole power factor correction demo board.


By Seb Springall

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