Empowering growth and inspiring innovation with highly efficient EcoGaN and SiC power solutions

24-05-2024 | ROHM Semiconductor | Power

ROHM will present its new power semiconductor solutions, with a special focus on wide bandgap devices, at this year's PCIM Europe. Its SiC, Si and GaN portfolio is designed to fulfil the needs of various sectors – focusing on e-mobility and power supply applications.

Following its motto 'Empowering Growth, Inspiring Innovation', the company will demonstrate how it solves social and ecological challenges with its technologies fostering sustainability.

Product highlights will include:

SiC: The company will premiere new SiC power modules for automotive applications and will show the conversion of its production to 8" SiC wafers and provide an additional outlook regarding its SiC product development. Its 4th Generation SiC MOSFETs realise industry-leading levels of low ON resistance, minimising switching losses and supporting 15V and 18V gate-source voltage.

GaN: The company will exhibit the EcoGaN family of 150V and 650V class GaN HEMTs in several Evaluation Kits. The power stage IC BM3GxxMUV-LB series – including built-in 650V GaN HEMTs and gate drivers – will be extended by higher integrated PFC and QR flyback converters. These devices deliver an optimal solution for all electronic systems that need high power density and efficiency. It will display over ten boards from its EcoGaN family – showcasing their contributions inside industrial solutions.

The company's power experts will participate in panel discussions and conference presentations and hold poster sessions at the PCIM Europe conference.

PCMI Europe, booth 304, hall 9, June 11th–13th, 2024.


By Seb Springall

Seb Springall is a seasoned editor at Electropages, specialising in the product news sections. With a keen eye for the latest advancements in the tech industry, Seb curates and oversees content that highlights cutting-edge technologies and market trends.