Sixth-generation SJ MOSFET developed with cutting-edge microfabrication technology

Magnachip Semiconductor Corporation announced today that the company released its 6th-generation 600V SJ MOSFET enhanced with microfabrication technology.

This device was constructed on the 180nm microfabrication process and the company's latest design technology. This sophisticated technology improves upon the earlier generation of SJ MOSFETs by narrowing the cell-pitches by 50% and reducing the RDS(on) (On resistance: the resistance value between the drain and the source of MOSFETs during on-state operation) by 42%. As a result, this product comes in the same Decawatt Package (DPAK) while delivering a low RDS(on) of 175mOhm and outstanding power density.

Also, the total gate charge is lowered by approximately 29% compared to the earlier generation, resulting in decreased switching loss and improved power efficiency. Power efficiency is one of the key features of this product, as it provides product designers flexibility with regard to various applications. In addition, a Zener diode is embedded between the gate and the source to strengthen the ruggedness and reliability of the MOSFET in an application and stop it from sustaining damage induced by external surges or electrostatic discharges.

With its high efficiency, flexible design and reliability, this new 600V SJ MOSFET can be employed in various applications, such as servers, OLED TVs and laptop fast chargers.

"Following the launch of this MOSFET, Magnachip plans to unveil additional 6th-generation SJ MOSFETs, including those with a fast recovery body diode, in 2024," said YJ Kim, CEO of Magnachip. "Aligned with customer demand, our technical innovation will further strengthen our industry presence and global market penetration."