Power MOSFETs offer increased overall efficiency in a compact power housing

30-11-2023 | Rutronik | Power

The DI080N06PQ N-Channel Power MOSFET from Diotec Semiconductor is supplied in a compact 5mm x 6mm power QFN package and impresses above all with its low on-state resistance as well as an extremely low thermal resistance at a junction temperature of -55C to +150C. They are ideal for commercial and industrial applications such as power tools, power supplies, synchronous rectifiers, battery chargers, DC-DC converters or synchronous rectifiers. They are obtainable in tape and reel packaging from Rutronik.

At a nominal 105A and 65V, the MOSFETs are characterised primarily by their low on-state resistance, fast switching times, and very low thermal resistance. They have a low gate threshold voltage, which allows control at the logic level, and impress with their enhanced overall efficiency by reducing power losses due to very low gate and output charging.

These N-Channel Power MOSFETs are available in a small power QFN package and weigh approximately 0.1g. They are very robust, RoHS compliant, and AEC-Q101 qualified.

Typical applications include DC drives, Power tools, Battery chargers, DC-DC converters, Power supplies, and Synchronous rectifiers.

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By Seb Springall

Seb Springall is a seasoned editor at Electropages, specialising in the product news sections. With a keen eye for the latest advancements in the tech industry, Seb curates and oversees content that highlights cutting-edge technologies and market trends.