SemiQ has expanded its portfolio of QSiC Silicon Carbide modules by releasing a family of 1200V MOSFETs that pairs with or without 1200V SiC Schottky Diodes in a SOT-227 package.
Produced from high-performance ceramics and precisely engineered to function with unwavering reliability in challenging conditions, the newly introduced SiC modules accomplish remarkably high performance. This improved performance empowers higher power densities and more streamlined design configurations. The modules feature high breakdown voltage (>1400V), high-temperature operation (Tj = 175C), and low Rds(On) shift over the full operating temperature range while supplying industry-leading gate oxide stability and gate oxide lifetime, avalanche (UIS) ruggedness, and extended short-circuit withstand times.
All new modules are tested at wafer-level gate burn-in to provide high-quality gate oxide with stable gate threshold voltage. Besides the burn-in test, which helps to stabilise the extrinsic failure rate, stress tests such as gate stress, HTRB drain stress, and high humidity, high voltage, and high temperature to ensure requisite industrial-grade quality levels.
Dr Timothy Han, president at SemiQ, said, "We are delighted with the customer input and needs for our new family of QSiC high-power modules and thank our SemiQ team who have worked tirelessly to build and qualify our latest QSiC modules."
The company's new 1200V SOT-227 modules are provided in 20mOhm, 40mOhm, and 80mOhm SiC MOSFET categories.
Target markets for the new modules with the company's existing SOT-227 SiC SBD modules include EV charging, OBCs, DC-DC converters, E-compressors, fuel cell converters, medical power supplies, energy storage systems, solar and wind energy systems, data centre power supplies, UPS/PFC circuits, and other automotive and industrial power applications.