Toshiba Electronics Europe GmbH has released a pair of automotive grade 40V N-channel power MOSFETs based on their latest U-MOS IX-H process. The new devices employ a new S-TOGLTM package that delivers several advantages in automotive applications.
Automotive safety-critical applications such as steering, braking and autonomous driving systems typically need more devices than other systems to meet redundancy conditions. Here, a power MOSFET with high current density is necessary due to the size constraints within automotive equipment.
The new XPJR6604PB and XPJ1R004PB offer a VDSS rating of 40V, and the XPJR6604PB is rated for a continuous drain current (ID) of 200A (XPJ1R004PB = 160A). Both devices are rated for pulsed current (IDP) at 3x this value, 600A and 480A respectively. The 200A rating exceeds the company's 6.5mm × 9.5mm DPAK+ package.
The new XPJR6604PB and XPJ1R004PB automotive MOSFETs use the company's innovative new S-TOGLTM package that measures just 7mm × 8.44mm × 2.3mm. The products are post-less and feature a multi-pin structure for the source leads, significantly decreasing package resistance.
Combining the S-TOGLTM package with its U-MOS IX-H process gives the XPJR6604PB an on-resistance (RDS(ON)) value of just 0.66mOhm (XPJ1R004PB = 1mOhm), representing an approximately 11% reduction when compared to its existing TO-220SM(W) packaged TKR74F04PB. Compared to this device, the mounting area has decreased by around 55% compared while retaining the channel-to-case thermal resistance characteristics (Zth(ch-c)) - XPJR6604PB = 0.4C/W and XPJ1R004PB = 0.67C/W.
Many automotive applications are based in severely harsh environments, so the reliability of surface mount solder joints is a vital consideration. The S-TOGLTM package utilises gull-wing leads that decrease mounting stress, enhancing the reliability of the solder joint.
Suited to harsh temperature environments, the MOSFETs are AEC-Q101 qualified and capable of operating at channel temperatures (Tch) as high as 175C.
The company provides matched shipments for devices whose gate threshold voltage range does not exceed 0.4V for each reel. This aids designs with small characteristic variations for applications needing parallel connectivity for high-current operation.