P-channel enhancement mode FET has fast switching times and high drain current

27-02-2023 | Mouser Electronics | Power

Diotec Semiconductor MMFTP3334K P-Channel Enhancement Mode FET, available now from Mouser, provides fast switching times, high drain current (4A maximum), and low on-state resistance in a SOT-23 (TO-236) package.

The FET offers a 30V maximum drain-source voltage, 1000mW maximum power dissipation, and 5.9nC typical total gate charge in a -50C to +150C junction temperature range.

This commercial-grade device features ESD protected gate, high drain current, and low on-state resistance. It has UL 94V-0 case material, SOT-23 (TO-236) package style. It offers Moisture Sensitivity Level 1, is AEC-Q101 qualified (-AQ only), and lead-free, RoHS and REACH compliant.

This dual P-channel MOSFET is ideal for signal processing, drivers, and logic-level converters.

By Seb Springall