Expanded lineup of CMOS DDR4 SDRAMs with new device

17-02-2023 | Alliance Memory | Semiconductors

Alliance Memory has expanded its portfolio of CMOS DDR4 SDRAMs with a new 16Gb device in the 96-ball FBGA package. Supplying the company's customers with a higher-density choice for a wide spectrum of applications, the AS4C1G16D4-062BCN offers improved performance over previous-generation DDR3 SDRAMs, with lower power consumption, higher speeds and transfer rates.

The DDR4 SDRAM provides a low operating voltage of +1.2V (±0.06V) to increase battery life in portable electronics such as smartphones and tablets. The product is developed, qualified, and recommended for usage in 5G designs, computing applications, smart meters, surveillance systems, HMI, digital signal controllers, PNDs, and more. Built on an 8n-prefetch architecture, the device delivers fast clock speeds up to 1600MHz and transfer rates up to 3200 MT/s.

The 1Gb x 16-bit device supports sequential and interleave burst types with read or write burst lengths of BC4, BL8, and on the fly. An auto pre-charge function supplies a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions incorporate auto- or self-refresh.

With minimal die shrinks, the DDR4 SDRAM delivers a reliable drop-in, pin-for-pin-compatible replacement for myriad similar solutions – eradicating the necessity for costly redesigns and part requalification. The device is offered in the commercial (0C to +95C) temperature range and is excellent for the industrial, networking, telecommunications, gaming, and consumer markets.

By Seb Springall