MOSFET addresses high-power lighting and industrial SMPS applications

02-11-2022 | Infineon | Industrial

Infineon Technologies has created a new CoolMOS PFD7 high-voltage MOSFET family, offering a new benchmark in 950V SJ technology. The new 950V series combines excellent performance with state-of-the-art ease of use and provides an integrated fast body diode supplying a robust device and, in turn, reduced BOM. The new products are tailored to ultra-high-power density and the highest efficiency designs and mainly address lighting systems and consumer and industrial SMPS applications.

The new products are ideal for flyback, PFC, and LLC/LCC designs, incorporating half- or full-bridge configurations making commutation robust and reliable. By combining an ultra-fast body diode with ultra-low reverse recovery charge (Q rr), they provide hard commutation ruggedness and reliability. This makes it the most robust SJ MOSFET in its voltage class, allowing usage across all topologies in the targeted applications. Also, greatly reduced switching losses (E OSS, Q OSS, and Q g) enhance efficiency in hard- and soft-switching applications and produce up to 4K lower MOSFET temperature compared to 900V CoolMOS C3 SJ MOSFET. The new products strengthen light- and full-load PFC efficiency by more than 0.2% while matching the performance regarding LLC efficiency, contributing to a greener world.

The new family provides up to 55% lower on-resistance (RDS(on)) devices in multiple SMD and THD packages, like 450mOhm in DPAK or 60mOhm in TO247. This allows designers to utilise smaller packages and boost power density and board space savings at lower BOM and production costs. A gate-source threshold voltage (V (GS),th) of 3V and smallest V (GS),th variation of ±0.5V, make the new devices simple to design-in and drive, providing increased design freedom. Due to the low threshold voltage and tolerance, MOSFET linear mode operation is evaded while enabling lower driving voltage and decreased idle loss. Further, a 60% improved gate charge compared to CoolMOS C3 results in notably decreased driving losses. ESD ruggedness is provided with a human body model level of class 2, delivering reduced ESD-related failures and enhanced manufacturing yield.

The new family comes with excellent portfolio granularity, with SMD and THD packages to allow smaller form factors with enhanced power density and BOM savings.


By Seb Springall