New low-power cascadable gain blocks launched

CML Microcircuits now offers the CMX90G301 and CMX90G302 Positive Gain Slope Amplifiers. Developed using its innovative SµRF RFIC/MMIC design capability, these general-purpose gain blocks are ideal for a wide range of wireless applications operating in the 1.4-7.1GHz frequency range, including 4G/5G infrastructure applications and devices operating in licence-free bands.

These devices use GaAs pHEMT technology to attain an optimal combination of low DC power, low noise, and high gain. The CMX90G301 offers +1dB positive gain slope, while the CMX90G302 provides a +2dB gain slope for applications needing more gain-slope compensation. The devices deliver a small signal gain of 14.8-16dB, a P1dB output rating of +11.5dBm at 3.5GHz and a low noise figure of 2dB.

As with other devices in the SµRF family, the Gain Blocks have been created for ease of use, with a high level of integration, supporting minimised component counts and decreased PCB footprints. As 'plug-in', cascadable, gain blocks they eradicate the necessity for passive equalisation circuits within the system design and, thanks to an onboard active bias circuit, the devices function over a wide supply voltage of 2.7V to 5V, with a typical current of 22mA. Furthermore, the RF ports of each device are matched to 50-Ohm, supporting rapid product development cycles, mainly for mass-market applications.

“The CMX90G301 and CMX90G302 Low-power Gain Blocks are the latest devices employing CML’s advanced SµRF design capability to address the growing market requirement for high-performing mmWave devices.”, said Matthew White, marketing manager, RF and mmWave. “CML’s customers can leverage our SµRF capability to reduce development cycle times and gain rapid access to emerging markets such as 5G satellite and IoT. The CMX90G301 and CMX90G302 are now available, joining the CMX90A702 Medium Power Amplifier, and future products in the SµRF family will include a range of PAs, LNAs, Gain Blocks and FEMs, all employing high-performance GaAs and GaN technologies.”