Third-generation SiC MOSFETs offer enhanced efficiency and reduced size

Toshiba Electronics Europe GmbH has released five new third-generation 650V SiC MOSFET devices for industrial equipment.

These highly efficient and versatile products will be employed in various demanding applications, including SMPS and UPS for servers, data centres and communication equipment. They will also find applications in renewable energy, including PV inverters and bi-directional DC-DC converters, such as those used for EV charging.

The new TW015N65C, TW027N65C, TW048N65C, TW083N65C and TW107N65C are based upon the company's advanced third generation SiC process, which optimises the cell structures used in second-generation devices.

As a result of this advancement, a key FoM calculated as the product of drain-source on-resistance (RDS(on)) and gate-drain charge (Qg) to represent static and dynamic losses has improved by approximately 80%. This greatly decreases losses and allows power solutions with higher power densities and lower running costs to be produced.

In common with earlier devices, the new third-generation MOSFETs incorporate a built-in SiC Schottky barrier with a low forward voltage (VF) of -1.35V (typ) to suppress fluctuation in RDS(on), thereby enhancing reliability.

The new devices can handle currents (ID) up to 100A and feature RDS(on) values as low as 15mOhm. All devices are housed in an industry-standard TO-247 package.