01-09-2022 | Renesas | Automotive & Transport
Renesas Electronics Corporation is developing a new generation of Si-IGBTs, which will be provided in a small footprint while offering low power losses. Targeted at next-generation EV inverters, AE5-generation IGBTs will be mass produced starting in the first half of 2023 on the company's 200mm and 300mm wafer lines at its factory in Naka, Japan. Further, it will ramp up production starting in the first half of 2024 at its new power semiconductor 300mm wafer fab to meet the burgeoning demand for power semiconductor products.
The silicon-based AE5 process for IGBTs attains a 10% reduction in power losses compared to the current-generation AE4 products, power savings that will support EV developers to save battery power and increase driving range. Also, the new products are around 10% smaller while retaining high robustness. The new devices deliver the industry's highest level of performance for IGBTs by optimally balancing low power loss and robustness trade-offs. Furthermore, the new IGBTs greatly improve performance and safety as modules by minimising parameter variations among the IGBTs and offering stability when operating IGBTs in parallel. These features offer engineers greater flexibility to develop smaller inverters that attain high performance.
"Demand for automotive power semiconductors is rapidly growing as EVs become more widely available," said Katsuya Konishi, vice president of Renesas' Power System Business Division. "Renesas' IGBTs provide highly reliable, robust power solutions that build on our experience in manufacturing automotive-grade power products for the last seven years. With the latest devices soon to be in mass production, we are providing optimal features and cost performance for mid-range EV inverters that are expected to grow rapidly in the future."