GaN IC boosts power density and simplifies design

15-08-2022 | EPC | Semiconductors

EPC has introduced a 100V, 35A integrated circuit designed for 48VDC-DC conversion employed in high-density computing applications and in 48V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23102 eGaN IC provides a maximum withstand voltage of 100V, supplying up to 35A load current, while capable of switching speeds of more than 1MHz.

Main features of the IC utilising its proprietary GaN IC technology comprise integrated input logic interface, level shifting, bootstrap charging and gate drive buffer circuits controlling 6.6mOhm RDS(on) high side and low side FETs configured as a half-bridge power stage.

The IC offers a thermally enhanced QFN package with a footprint of only 3.5mm x 5mm, providing an extremely small solution size for the highest power density applications.

When operated in a 48V to 12V buck converter, the device provides greater than 96% peak efficiency at 1MHz switching frequency and around 8A to 17A of continuous load current with a rated current of 35A.

“The ePower family of products makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology,” said Alex Lidow, CEO and co-founder of EPC. “Integrated devices are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency. Designers can use these devices to make lighter weight and more precise BLDC motor drives, higher efficiency 48 V input DC-DC converters, higher fidelity class-d audio systems, and other industrial and consumer applications.”

The EPC90147 development board is a 100V maximum device voltage, 35A maximum output current, half bridge featuring the EPC23102 ePower Stage IC. The purpose of the board is to ease the evaluation process. This 2” x 2” (50.8mm x 50.8mm) board is intended for optimal switching performance and includes all critical components for easy evaluation.