Toshiba Electronics Europe GmbH now offers its highly accurate G2 SPICE models enabling designers to more faithfully simulate the execution of their designs before committing to hardware. Alongside its existing G0 SPICE models that emphasise computational speed over accuracy, the new range of models is now accessible to accurately simulate transient characteristics.
Simulation is a beneficial tool for designers as they lower the number of prototypes needed, saving the necessity for respins, thereby improving development efficiency and decreasing overall time, cost, and risk.
These new models for discrete power devices are developed using the macro model format, incorporating multiple compact models to match the structure of the device, representing the electrical characteristics with a few non-linear elements and a continuous arbitrary function. With this approach, switching simulations are more accurate and closer to actual measurements by enhancing the reproducibility of the high-current-domain characteristics of the ID-VDS curve, incorporating the voltage-dependent characteristics of the parasitic capacitance.
The models cover low voltage MOSFETs (12V-300V) and medium to high voltage MOSFETs (400V to 900V). Versions are available for PSpice and LTSpice.