High-performance SiC FETs for power applications

09-06-2022 | Mouser Electronics | Power

Mouser now stocks the UF4C and UF4SC 1200V SiC FETs from UnitedSiC (now Qorvo). Part of a comprehensive line of high-performance SiC FETs, this fourth-generation family of devices provides industry-leading FOM in on-resistance, making it ideal for power solutions in mainstream 800V bus architectures in applications including onboard chargers for EVs, industrial battery chargers, industrial power supplies, DC-DC solar inverters, and more.

The UF4C/SC SiC FETs offer designers multiple on-resistance and package options. The 1200V SiC FETs are provided in versions with on-resistance (RDS(on)) values of 23mOhm to 70mOhm and either a three-lead TO-247-3L package or a four-lead TO-247-4L package. This package includes a Kelvin gate to provide ultra-low gate charge and excellent reverse recovery characteristics, allowing designers to switch inductive loads and any application needing a standard gate drive.

All the UF4C/SC family devices can be safely driven with standard 0V to 12V or 15V gate drive voltage, producing an ideal replacement for silicon IGBTs, FETs, or super-junction devices with no change to the gate drive voltage. Other significant features of the SiC FETs incorporate an excellent threshold noise margin preserved with a true 5V threshold voltage, outstanding reverse recovery, and a built-in ESD gate protection clamp.

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