SiC power devices enable new levels of efficiency and reliability

29-03-2022 | Microchip Technology | Semiconductors

Microchip Technology Inc. has expanded its SiC portfolio by releasing the industry's lowest on-resistance [RDS(on)] 3.3kV SiC MOSFETs and the highest current-rated SiC SBDs obtainable in the market, allowing designers to take advantage of ruggedness, reliability and performance. With the expansion of the company's SiC portfolio, designers have the tools to develop smaller, lighter and more efficient solutions for renewable energy, electrified transportation, aerospace and industrial applications.

Many silicon-based designs have reached their limits in efficiency improvements, system cost reduction and application innovation. While high-voltage SiC offers a proven alternative to produce these results, until now, the availability of 3.3kV SiC power devices has been limited. The company's 3.3kV MOSFETs and SBDs join the company's comprehensive portfolio of SiC solutions that include 700V, 1200V and 1700V die, discretes, modules and digital gate drivers.

The 3.3kV SiC power devices comprise MOSFETs with the industry's lowest RDS(on) of 25mOhm and SBDs with the industry's highest current rating of 90A. The MOSFETs and SBDs are offered in die or package form. These new performance levels allow designers to simplify their design, develop higher-power systems and utilised fewer paralleled components for smaller, lighter and more efficient power solutions.

"We focus on developments that provide our customers the ability to quickly innovate systems and move their end products into a competitive advantage position faster," said Leon Gross, vice president of Microchip's discrete product business unit.

"Our new family of 3.3kV SiC power products allows customers to move to high-voltage SiC with ease, speed and confidence and benefit from the many advantages of this exciting technology over silicon-based designs."

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