GaN HEMTs feature breakthrough withstand gate voltage

29-03-2022 | ROHM Semiconductor | Power

ROHMs 150V GaN HEMTs, GNE10xxTB series (GNE1040TB) improve the gate withstand voltage (rated gate-source voltage) to an industry-leading 8V – ideally to be used in power supply circuits for industrial equipment including base stations and data centres together with IoT communication devices.

Due to the growing demand for server systems in response to the increasing number of IoT devices – enhancing power conversion efficiency and decreasing size have become crucial social issues that need further advancements in the power device sector.

Together with mass-producing industry-leading SiC devices and feature-rich silicon devices, the company has developed GaN devices that accomplish superior high-frequency operation in the medium voltage range, enabling the company to offer power solutions for a broader assortment of applications.

These new products use an original structure that increases the rated gate-source voltage from the conventional 6V to 8V. As a result, degradation is stopped, even if overshoot voltages exceeding 6V occurs through switching – contributing to better design margin and higher reliability in power supply circuits. The series is provided in a highly versatile package offering superior heat dissipation and sizeable current capability, facilitating handling during the mounting process.

By Natasha Shek