Superjunction device lowers conduction and switching losses

24-02-2022 | Vishay Precision Group | Power

Vishay Intertechnology has released the latest device in its fourth generation of 600V E Series power MOSFETs. Offering high efficiency for telecom, server, and datacentre power supply applications, the Vishay Siliconix n-channel SiHK045N60E cuts on-resistance by 27% compared with previous-generation 600V E Series MOSFETs while providing 60% lower gate charge. This produces the industry's lowest gate charge times on-resistance for devices in the same class, a key FOM for 600V MOSFETs employed in power conversion applications.

The company provides a wide line of MOSFET technologies that support all stages of the power conversion process, from high voltage inputs to the low voltage outputs needed by the latest electronic systems. With the new device and upcoming devices in the fourth-generation series family, the company is meeting the demand for efficiency and power density advances in the first stages of the power system architecture – power factor correction and hard-switched AC/DC converter topologies.

Constructed on its latest energy-efficient E Series superjunction technology, the device offers low typical on-resistance of 0.043-Ohm at 10V and ultra-low gate charge down to 65nC. The device's FOM of 2.8-Ohm*nC is 3.4% lower than the nearest competing MOSFET in the same class. For improved switching performance, the device offers low effective output capacitance Co(er) of 117pF. These values translate into decreased conduction and switching losses to conserve energy. The device's thermal resistance RthJC of 0.45C/W is 11.8% lower than the nearest competing device, offering a higher thermal capability.

Provided in the PowerPAK 10 x 12 package, the device released today is RoHS-compliant, halogen-free, and created to withstand overvoltage transients in avalanche mode with guaranteed limits through 100% UIS testing.

By Natasha Shek