New dual N-channel MOSFET designed for LIB charging and discharging switches

06-01-2022 | New Yorker Electronics | Power

New Yorker Electronics now offers the new Good-Ark Semiconductor SSF2418E 6A/20V Dual N-Channel MOSFET with ESD protection in the SOT-23-6L package. The device uses the latest trench technologies and advanced process techniques to attain excellent RDS(ON), low gate charge and a high repetitive avalanche rating.


Furnished with ESD protection up to 2KV, this Halogen-free device is ideal as a unidirectional or bidirectional load switch enabled by its common drain configuration. Used in DC-DC conversion, load switching and battery protection, further benefits comprise high energy efficiency, fast switch speed and low input and output leakage. It is also offered in the TSSOP-8 package.


The device offers advanced trench MOSFET process technology and ultra-low on-resistance with low gate charge, together with fast switching and reverse body recovery. The device has a 150C operating temperature and is a lead-free product.


Typical areas of use include PWM, load switching, and general-purpose applications.

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