Mouser now distributes ferroelectric random-access memory (FRAM) and large-density resistive random access memory (ReRAM) products from Fujitsu Semiconductor Memory Solution.
Fujitsu FRAMs are new-generation non-volatile memories that satisfy engineers’ demands for higher read/write endurance, faster writing speed, and lower power consumption than EEPROM. The FRAM is offered in serial (SPI and I²C), parallel interfaces, and a broad range of compact, high-density package types. Memory size options are offered from 4Kbits up to 8Mbits. It was the first company to begin mass production of FRAM in 1999. The company’s FRAM products can be seen in many essential applications, covering automotive, industrial, medical and consumer products.
Offering an SPI interface, ReRAM functions at a wide range of power supply voltages from 1.6V to 3.6V. The EEPROM-compatible device provides very low power consumption of just 0.15mA in read state and 1.5mA in write, which, together with its 8Mbit density, makes it excellent for small, battery-operated wearable devices such as smartwatches, hearing aids, and smart glasses.