New MOSFET reduces EMI in switching power supply application

16-08-2021 | Toshiba | Power

Toshiba Electronics Europe GmbH has released the TPHR7404PU, a 40V, N-channel MOSFET that utilises the latest generation U-MOSIX-H process. The MOSFET’s low-spike capability decreases overshoot in switching applications. This makes it excellent for secondary synchronous rectification in switching power supply applications due to its contribution to decreased EMI. This is accomplished while sustaining an extremely low on-resistance of just 0.74mOhm (max) at a VGS of 10V. A gate threshold voltage of 2V to 3V (Id =1mA) will serve to avoid unintended turn on, for example, in battery-powered tools.


The device provides a new cell structure, employing a parasitic snubber, limiting noise and ringing throughout switching. This produces a lower peak voltage when switching and decreased signal ringing. Applications such as high-efficiency DC-DC converters, motor drivers, and switching voltage regulators will profit from the low-spike capability.


Available in a 5mm x 6mm SOP Advance package, its small size and exceptionally low 0.71C/W channel-to-case thermal resistance make it ideal for efficiency-focused, compact power solutions.

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