Hybrid IGBTs with built-in SiC diode achieve lower loss and power consumption

23-07-2021 | ROHM Semiconductor | Semiconductors

ROHM developed Hybrid IGBTs with integrated 650V SiC Schottky barrier diode, the RGWxx65C series. The devices are qualified under the AEC-Q101 automotive reliability standard. They are excellent for automotive and industrial applications that handle large power, such as photovoltaic power conditioners, onboard chargers, and DC-DC converters used in electric and electrified vehicles (xEV).

The series uses the company's low-loss SiC Schottky barrier diodes in the IGBT’s feedback block as a freewheeling diode that has virtually no recovery energy and, therefore, minimal diode switching loss. Furthermore, since the recovery current does not have to be handled by the IGBT in turn-on mode, the IGBT turn-on loss is decreased significantly. Both effects together offer up to 67% lower loss over conventional IGBTs and 24% lower loss compared with Super Junction MOSFETs when used in-vehicle chargers. This effect gives good cost performance while contributing to lower power consumption in industrial and automotive applications.

Application Examples for the series include automotive chargers, vehicle DC-DC converters, solar power inverters, and UPS.