New high-power PIN Diode switches uses GaN semiconductor technology

28-06-2021 | Fairview | Connectors, Switches & EMECH

Fairview Microwave has launched a new series of high-power broadband RF and microwave PIN diode coaxial packaged switches that are excellent for aerospace and defence, microwave radio and commercial communications, VSAT, SATCOM, test and measurement, wireless infrastructure and fibre optics applications.

These new switches employ GaN semiconductor technology. In the manufacturing process, GaN and chip and wire technology assure state-of-the-art power performance with an exceptional power-to-volume ratio, making these perfect for broadband high-power applications.

As these are PIN diode designs, they also provide fast switching speed as low as <50nsec. They provide excellent thermal properties and a notably higher breakdown voltage that tolerates higher input power levels over broadband, narrowband RF and microwave frequencies. All models in this new line satisfy a variety of environmental conditions for altitude, vibration, humidity and shock, and are EAR99-compliant.

“Our new GaN PIN diode switches offer excellent power to volume ratio, thermal properties, and higher breakdown voltage, which delivers state-of-the-art power handling capability in small compact packages, plus they’re available with same-day shipping,” said Tim Galla, product line manager.

By Natasha Shek