N-channel MOSFET delivers high power density and efficiency

27-05-2021 | Vishay | Power

Vishay Intertechnology has launched a versatile new 30 V n-channel TrenchFET Gen V power MOSFET that produces increased power density and efficiency for isolated and non-isolated topologies. Provided in 3.3mm x 3.3mm thermally enhanced PowerPAK 1212-8S package, the Vishay Siliconix SiSS52DN offers best in class on-resistance of 0.95mOhm at 10V, a 5% increase over the previous-generation product. Also, the device provides on-resistance of 1.5mOhm at 4.5V, while its 29.8mOhm*nC on-resistance times gate charge at 4.5V — a critical FOM for MOSFETs employed in switching applications — is one of the lowest on the market.


The device's FOM represents a 29 % improvement over previous-generation devices, translating into decreased conduction and switching losses to save energy in power conversion applications.


The device is ideal for low side switching for synchronous rectification, synchronous buck converters, DC-DC converters, switch tank topologies, OR-ring FETs, and load switches for power supplies in servers and telecom and RF equipment. By providing high performance in isolated and non-isolated topologies, the MOSFET simplifies part selection for designers working with both.


The device is 100% RG and UIS-tested, RoHS-compliant, and halogen-free.

Related product news