New SiC MOSFETs offer superior switching and improved reliability

22-02-2021 | ON Semiconductor | Power

ON Semiconductor has launched a new range of SiC MOSFET devices for demanding applications where power density, efficiency and reliability are essential considerations. By substituting existing silicon switching technologies with the new SiC devices, designers can deliver notably better performance in applications such as EV OBC, solar inverters, server PSU, telecoms and UPS.


The new automotive AECQ101 and Industrial grade qualified 650V SiC MOSFETs are based upon a new wide bandgap material that gives superior switching performance and enhanced thermals when compared to silicon. This produces improved efficiency at the system level, enhanced power density, reduced EMI and decreased system size and weight.


Commenting on the releases, Asif Jakwani, senior vice president of the Advanced Power Division at ON Semiconductor, said: “In modern power applications such as on-board chargers (OBC) for EV and other applications including renewable energy, enterprise computing and telecom, efficiency, reliability and power density are constant challenges for designers. These new SiC MOSFETs significantly improve performance over the equivalent silicon switching technologies, allowing engineers to meet these challenging design goals. The enhanced performance delivers lower losses that enhance efficiency and reduce thermal management needs as well as reducing EMI. The end result of using these new SiC MOSFETs is a smaller, lighter, more efficient and more reliable power solution.”


The new devices are all surface mount and offered in industry-standard package types, including TO247 and D2PAK.

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