New SMT assembly transformer is part of a power supply solution

03-12-2020 | Wurth | Power

The WE-AGDT series creates a new SMT assembly transformer which, at the same time, is part of a power supply solution designed by Würth Elektronik for demanding gate control of SiC MOSFETs. The innovative series is a compact transformer in an EP7 package. It provides a wide input voltage range from 9V to 36V, a high saturation current of 4.5A. It also offers a very low leakage inductance and low capacitance of 6.8pF between the windings. This gives rise to high CMTI of the gate driver system.

The series includes six transformers, each optimised for its particular reference design. Due to the two separate secondary windings, they enable both bipolar (+15V, -4V) and unipolar (+15V to +20V, 0V) output voltages. The input voltage of 9V to 36V achieves a maximum output power of 3W to 6W. The transformers are optimised for SiC applications, but are also ideal for optimally controlling IGBT and power MOSFETs, and, given a suitable DC-DC converter, even for high-voltage GaN FETs. A reference design for a compact, galvanically isolated DC-DC converter for SiC MOSFET gate drivers, is available.


"With the increasing spread of power semiconductor devices in silicon carbide technology, which work at switching frequencies above 100 kHz, their gate control requirements are becoming more and more sophisticated. With the WE-AGDT series and the associated reference design, we have developed a solution that is as innovative as it is reliable, allowing developers to easily implement a compact, efficient and flexible supply with up to 6 W output power," says Eleazar Falco, application engineer at Würth Elektronik eiSos.

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