Toshiba Electronics Europe has expanded its comprehensive portfolio of power-saving N-channel MOSFETs with the introduction of the SSM6N951L. Using the company’s advanced power semiconductor process expertise and cutting-edge IP, this 12V-rated common-drain device displays multiple industry-leading operational performance parameters.
The device is intended for inclusion in battery protection circuitry included into the Li-Ion battery packs. Its ultra-low on-resistance (4.6mOhm maximum at a VGS of 3.8V) and minimal gate-source leakage current (1μA maximum at a VGS of 8V) mean that this power discrete device offers considerably lower thermal characteristics than competing devices. This is of real value throughout the battery packs’ charge/discharge cycles, enabling higher-density solutions to be created that support more rapid charge rates, as well as delivering much greater reliability and a longer operational lifespan too.
These new MOSFETs are supplied in low-profile TCSP6A-172101 format packages (with dimensions of 2.14mm x 1.67mm x 0.11mm). They are optimised for including in modern space-limited battery-powered equipment.