MOSFET half-bridge power stage provides increased power density and efficiency

Vishay Intertechnology has introduced a new 40V n-channel MOSFET half-bridge power stage that produces increased power density and efficiency for medical, white goods and industrial, and telecom applications. Incorporating high side and low side MOSFETs in one compact PowerPAIR 3.3mm x 3.3mm package, the Vishay Siliconix SiZ240DT offers best in class on-resistance and on-resistance times gate charge — a key FOM for MOSFETs used in power conversion applications.

The two TrenchFET MOSFETs in the device are internally connected in a half-bridge configuration. The device's Channel 1 MOSFET, which is generally used as the control switch in a synchronous buck converter, delivers maximum on-resistance of 8.05mOhm at 10V and 12.25mOh at 4.5 V. The Channel 2 MOSFET, which is typically a synchronous switch, features on-resistance of 8.41mOhm at 10V and 13.30mOhm at 4.5V. These values are up to 16% less than the nearest competing products. When merged with low gate charge of 6.9nC (Channel 1) and 6.5nC (Channel 2), the resultant on-resistance times gate charge FOM is 14% lower than the next best device, allowing higher efficiency for fast switching applications.

Smaller than dual devices by 65% and in 6mm x 5mm packages, the dual MOSFET is one of the most compact integrated products available. It furnishes designers with a space-saving solution for motor control in vacuum cleaners, drones, power tools, home/office automation, and non-implantable medical devices, in addition to half-bridge power stages for synchronous buck DC-DC converters, wireless chargers, and switch-mode power supplies in telecom equipment and servers.