High-speed CMOS DDR4 SDRAMs offers increased efficiency and performance

07-10-2020 | Alliance Memory | Semiconductors

To satisfy the growing demand for higher-density CMOS DDR4 SDRAMs, Alliance Memory has expanded its portfolio with two new 8Gb devices. Providing improved performance over previous-generation DDR3 SDRAMs, the AS4C1G8D4 and AS4C512M16D4 provide lower power consumption and faster data transfer rates in 78-ball and 96-ball FBGA packages, respectively.

Compared with DDR3 SDRAMs, the devices decrease operating voltages from 1.65V to +1.2V (±0.06V) to improve battery life in portable electronics such as smartphones and tablets. For improved efficiency and performance in 5G designs, desktop computers, and servers, the 1Gb x 8-bit AS4C1G8D4 and 512M x 16-bit AS4C512M16D4 provide up to 16 memory banks and produce faster clock speeds of 1333MHz for exceptionally high transfer rates to 2666Mbps/pin.

With a minimal die shrinks, the DDR4 SDRAMs deliver reliable drop-in, pin-for-pin-compatible replacements for multiple similar solutions — eradicating the necessity for costly redesigns and part requalification. Provided in commercial (0C to +95C) and industrial (-40C to +95C) temperature ranges, the devices are excellent for the industrial, networking, IoT, automotive, gaming, and consumer markets.

By Natasha Shek