SiC diodes designed and built for reliability and ruggedness

01-06-2020 | | Semiconductors

SemiQ Inc has released its third generation 1700V 5A SiC Schottky Diode. The GP3D005A170B diode is supplied in the industry-standard TO-247-2 package as well as bare die format. Further 10A and 20A 1700V diodes will be available soon.

Michael T. Robinson, SemiQ president comments: “This 1700V Silicon Carbide Schottky Diode is the latest extension to our Gen 3 product family which was introduced in 2019. This platform was designed and built for reliability and ruggedness. It features dual-layer chip passivation with over 12 million device hours of HTRB and H3TRB. Packaged devices are 100% avalanche tested in production, ensuring even greater device ruggedness.”

The company's diodes are optimised for power conversion applications where low losses and high efficiency are crucial, which includes renewable energy, electric vehicle charging, UPS, solar power, and fuel cell power systems.

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