GaN FET achieves new levels of power density and efficiency

23-03-2020 | Texas Instruments | Power

Texas Instruments LMG341xR150 GaN FET with integrated driver and protection enables designers to realise new levels of power density and efficiency in power electronics systems. The device provides ultra-low input and output capacitance, zero reverse recovery to decrease switching losses by as much as 80%, and low switch node ringing to lessen EMI. The features enable dense and efficient topologies like the totem-pole PFC.


The device provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to ease design, maximise reliability, and optimise the performance of any power supply.


The integrated gate drive allows 100V/ns switching with near-zero VDS ringing. Less than 100ns current-limiting response self-protects against unintended shoot-through events. Overtemperature shutdown stops thermal runaway and system interface signals give self-monitoring capability.


Typical applications include industrial AC/DC, Notebook PC power adapters, LED signage, and servo drive power stage.

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