GaN FET achieves new levels of power density and efficiency

Texas Instruments LMG341xR150 GaN FET with integrated driver and protection enables designers to realise new levels of power density and efficiency in power electronics systems. The device provides ultra-low input and output capacitance, zero reverse recovery to decrease switching losses by as much as 80%, and low switch node ringing to lessen EMI. The features enable dense and efficient topologies like the totem-pole PFC.

The device provides a smart alternative to traditional cascode GaN and standalone GaN FETs by integrating a unique set of features to ease design, maximise reliability, and optimise the performance of any power supply.

The integrated gate drive allows 100V/ns switching with near-zero VDS ringing. Less than 100ns current-limiting response self-protects against unintended shoot-through events. Overtemperature shutdown stops thermal runaway and system interface signals give self-monitoring capability.

Typical applications include industrial AC/DC, Notebook PC power adapters, LED signage, and servo drive power stage.