MOSFET increases power density and saves energy in portable electronics

13-02-2020 | Vishay | Power

Vishay Intertechnology offers new -30V p-channel TrenchFET Gen IV power MOSFET that offers industry-low on-resistance of 3.5mOhm at 10V in the 3.3mm x 3.3mm thermally enhanced PowerPAK 1212-8S package, as well as best in class on-resistance times gate charge — a critical FOM for MOSFETs employed in switching applications — of 172mOhm*nC. Purpose-built to improve power density, the space-saving Vishay Siliconix SiSS05DN is 65% smaller than devices with similar on-resistance in 6mm x 5mm packages.

The on-resistance of the MOSFET is 26% lower than the previous-generation solution and claimed to be 35% lower than the next best product on the market, and its FOM is 15% lower than the nearest competing device. These industry-best values show reduced conduction and switching losses to save energy and improve battery run times in portable electronics while reducing voltage drops over the power path to stop false triggering. The device's compact form factor is simpler to fit into designs with restricted PCB real estate.

With its industry-standard footprint size, the device offers a drop-in upgrade to current parts in applications employing 5V to 20V input rails. The MOSFET is perfect for adapter and load switches; reverse polarity protection; and motor drive control in battery-powered devices, battery chargers, computers, consumer electronics, telecom equipment, and more.

The device is 100 % RG and UIS-tested, RoHS-compliant, and halogen-free.

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