Ultra-high CMTI isolated gate drivers for driving SiC or GaN transistors in multiple applications

Maxim MAX2270x Ultra-High CMTI Isolated Gate Drivers, available now from Mouser, are single-channel isolated gate drivers with ultra-high CMTI of 300kV/μs (typ). The devices are intended to drive SiC or GaN transistors in multiple inverter or motor control applications. All devices possess integrated digital galvanic isolation using the company's proprietary process technology. The devices offer variants with output options for gate driver common pin GNDB (MAX22700), Miller clamp (MAX22701), or adjustable UVLO (MAX22702). Additionally, variants are provided as Differential (D versions) or Single-Ended (E versions) inputs. These devices transfer digital signals within circuits with different power domains. All of the devices give isolation for a withstand voltage rating of 3kVRMS for 60 seconds.

All devices support a minimum pulse width of 20ns with a maximum pulse width distortion of 2ns. The part-to-part Propagation Delay is matched within 2ns (max) at +25C ambient temperature and 5ns (max) over the -40C to +125C operating temperature range. This feature decreases the power transistor’s dead time, therefore increasing overall efficiency. The MAX22700 and the MAX22702 have a maximum RDSON of 1.25Ohm for the low-side driver, and the MAX22701 has an RDSON of 2.5Ohm for the low-side driver. All devices have a maximum RDSON of 4.5Ohm for the high-side driver.

The MAX2270x can be employed to drive SiC or GaN FETs with different output gate drive circuitry and B-side supply voltages. All of the devices in the MAX2270x family are available in an eight-pin, narrow-body SOIC package with 4mm of creepage and clearance. The packaging material has a minimum CTI of 600V, which provides it with a group I rating in creepage tables. All devices are rated for operation at ambient temperatures of -40C to +125C.