Power MOSFETs offer high power density and efficiency

14-10-2019 | Rutronik | Power

Infineon OptiMOS 3 and 5 BiC power MOSFETs in a space-saving SuperSO8 package facilitate higher power density as well as improving robustness in comparison to former models. Now available at Rutronik UK, these power MOSFETs reduce system costs while increasing the overall performance.


Due to the low on-state resistance (RDS(on)) the BiC MOSFETs allow reduced losses at a good price-performance ratio. Moreover, the low thermal impedance between Junction to Case (RthJC) gives outstanding thermal behaviour, which supports a lower full load temperature. Low reverse recovery charge (Qrr) enhances the system reliability by giving a significant reduction of voltage overshoot, which reduces the requirement for snubber circuits. As a result, engineering costs and effort are reduced.


The 175-degree rating of the BiC MOSFETs facilitates designs with either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Also, with the increases in the temperature rating, 20% improvement in the safe operating area is achieved.


With their performance data, these BiC MOSFETs are excellent for applications including server, telecom, three-phase inverter, low voltage drives as well as for class D audio applications. The portfolio includes versions from 60V to 250V.

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